Vishay TrenchFET N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal (1 tape of 20 units)*

R 289,76

(exc. VAT)

R 333,22

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,600 unit(s), ready to ship from another location

Units
Per unit
Per Tape*
20 - 80R 14.488R 289.76
100 - 240R 14.126R 282.52
260 - 980R 13.702R 274.04
1000 - 2980R 13.154R 263.08
3000 +R 12.628R 252.56

*price indicative

Packaging Options:
RS stock no.:
787-9024
Mfr. Part No.:
SI1032R-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-75

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

340mW

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Width

0.86mm

Height

0.8mm

Length

1.68mm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy