Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3

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Subtotal (1 tape of 20 units)*

R 120,22

(exc. VAT)

R 138,26

(inc. VAT)

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Being discontinued
  • Final 28,600 unit(s), ready to ship from another location
Units
Per unit
Per Tape*
20 - 80R 6.011R 120.22
100 - 240R 5.861R 117.22
260 - 980R 5.685R 113.70
1000 - 2980R 5.457R 109.14
3000 +R 5.239R 104.78

*price indicative

Packaging Options:
RS stock no.:
787-9024
Mfr. Part No.:
SI1032R-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

210mA

Maximum Drain Source Voltage Vds

20V

Package Type

SC-75

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

340mW

Maximum Gate Source Voltage Vgs

±6 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.8mm

Length

1.68mm

Standards/Approvals

IEC 61249-2-21, RoHS

Width

0.86 mm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


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