Vishay Si1012CR Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3
- RS stock no.:
- 787-9005
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 tape of 20 units)*
R 57,68
(exc. VAT)
R 66,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 09 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 80 | R 2.884 | R 57.68 |
| 100 - 240 | R 2.812 | R 56.24 |
| 260 - 980 | R 2.728 | R 54.56 |
| 1000 - 2980 | R 2.619 | R 52.38 |
| 3000 + | R 2.514 | R 50.28 |
*price indicative
- RS stock no.:
- 787-9005
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si1012CR | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 240mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.86 mm | |
| Length | 1.68mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si1012CR | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 240mW | ||
Maximum Operating Temperature 150°C | ||
Width 0.86 mm | ||
Length 1.68mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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