N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

RS stock no.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

Image representative of range

Bulk discount available

Price (Excl VAT) Each (On a Tape of 20)

R 6,407

(exc. VAT)

R 7,368

(inc. VAT)

On back order for despatch 2025/01/29*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Tape**
20 - 80	R 6,407	R 128,14
100 - 240	R 6,247	R 124,94
260 - 980	R 6,059	R 121,18
1000 - 2980	R 5,817	R 116,34
3000 +	R 5,584	R 111,68

**price indicative

RS stock no.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

Si1012CR, N-Channel 20V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	630 mA
Maximum Drain Source Voltage	20 V
Package Type	SC-75
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	240 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Length	1.68mm
Typical Gate Charge @ Vgs	1.3 nC @ 8 V
Transistor Material	Si
Width	0.86mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	0.8mm

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

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