Vishay Si1012CR Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3

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Subtotal (1 tape of 20 units)*

R 59,28

(exc. VAT)

R 68,18

(inc. VAT)

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Units
Per unit
Per Tape*
20 - 80R 2.964R 59.28
100 - 240R 2.89R 57.80
260 - 980R 2.804R 56.08
1000 - 2980R 2.692R 53.84
3000 +R 2.584R 51.68

*price indicative

Packaging Options:
RS stock no.:
787-9005
Mfr. Part No.:
SI1012CR-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

630mA

Maximum Drain Source Voltage Vds

20V

Package Type

SC-75

Series

Si1012CR

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.3nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

240mW

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.8mm

Width

0.86 mm

Length

1.68mm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


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