Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88
- RS stock no.:
- 124-2253
- Mfr. Part No.:
- 2N7002BKS,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 3 012,00
(exc. VAT)
R 3 465,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,000 unit(s) shipping from 06 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.004 | R 3,012.00 |
| 6000 - 12000 | R 0.979 | R 2,937.00 |
| 15000 - 27000 | R 0.95 | R 2,850.00 |
| 30000 + | R 0.912 | R 2,736.00 |
*price indicative
- RS stock no.:
- 124-2253
- Mfr. Part No.:
- 2N7002BKS,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 445mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 445mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
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