onsemi NTS4409N Type N-Channel MOSFET, 700 mA, 25 V Enhancement, 3-Pin SOT-23 NTS4409NT1G
- RS stock no.:
- 780-4770
- Mfr. Part No.:
- NTS4409NT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
R 115,90
(exc. VAT)
R 133,275
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 4.636 | R 115.90 |
| 50 - 100 | R 4.52 | R 113.00 |
| 125 - 225 | R 4.384 | R 109.60 |
| 250 - 475 | R 4.209 | R 105.23 |
| 500 + | R 4.04 | R 101.00 |
*price indicative
- RS stock no.:
- 780-4770
- Mfr. Part No.:
- NTS4409NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | NTS4409N | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Power Dissipation Pd | 330mW | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Series NTS4409N | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Power Dissipation Pd 330mW | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 25V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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