Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

RS stock no.:: 780-0614
Mfr. Part No.:: NTJD4158CT1G
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Image representative of range

Bulk discount available

Price (Excl VAT) Each (On a Tape of 25)

R 6,694

(exc. VAT)

R 7,698

(inc. VAT)

On back order for despatch 2025/03/03*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Tape**
25 - 25	R 6,694	R 167,35
50 - 100	R 6,526	R 163,15
125 - 225	R 6,331	R 158,275
250 - 475	R 6,078	R 151,95
500 +	R 5,834	R 145,85

**price indicative

RS stock no.:: 780-0614
Mfr. Part No.:: NTJD4158CT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	250 mA, 880 mA
Maximum Drain Source Voltage	20 V, 30 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.5 Ω, 500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	270 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip	2
Transistor Material	Si
Width	1.35mm
Typical Gate Charge @ Vgs	0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Length	2.2mm
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Dual N/P-Channel MOSFET, ON Semiconductor

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