onsemi 2N7002W N-Channel MOSFET, 340 mA, 60 V Enhancement, 3-Pin SC-70 2N7002WT1G
- RS stock no.:
- 780-0472
- Mfr. Part No.:
- 2N7002WT1G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 117,30
(exc. VAT)
R 134,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,100 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 29 September 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 1.173 | R 117.30 |
| 200 - 400 | R 1.144 | R 114.40 |
| 500 - 900 | R 1.109 | R 110.90 |
| 1000 - 1900 | R 1.065 | R 106.50 |
| 2000 + | R 1.022 | R 102.20 |
*price indicative
- RS stock no.:
- 780-0472
- Mfr. Part No.:
- 2N7002WT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 340mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70 | |
| Series | 2N7002W | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 880mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Power Dissipation Pd | 330mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.35mm | |
| Height | 900μm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 340mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70 | ||
Series 2N7002W | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 880mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Power Dissipation Pd 330mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.35mm | ||
Height 900μm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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