onsemi 2N7002W N-Channel MOSFET, 340 mA, 60 V Enhancement, 3-Pin SC-70 2N7002WT1G
- RS stock no.:
- 163-0841
- Mfr. Part No.:
- 2N7002WT1G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
R 1 977,00
(exc. VAT)
R 2 274,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 3,000 left, ready to ship from another location
- Plus 3,000 left, shipping from 29 September 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | R 0.659 | R 1,977.00 |
| 9000 + | R 0.642 | R 1,926.00 |
*price indicative
- RS stock no.:
- 163-0841
- Mfr. Part No.:
- 2N7002WT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 340mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002W | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 330mW | |
| Forward Voltage Vf | 880mV | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Height | 900μm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 340mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002W | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 330mW | ||
Forward Voltage Vf 880mV | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Height 900μm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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