onsemi NTD18N06L N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 NTD18N06LT4G
- RS stock no.:
- 773-7875
- Mfr. Part No.:
- NTD18N06LT4G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 106,01
(exc. VAT)
R 121,91
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 95 | R 21.202 | R 106.01 |
| 100 - 245 | R 20.672 | R 103.36 |
| 250 - 495 | R 20.052 | R 100.26 |
| 500 - 995 | R 19.25 | R 96.25 |
| 1000 + | R 18.48 | R 92.40 |
*price indicative
- RS stock no.:
- 773-7875
- Mfr. Part No.:
- NTD18N06LT4G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | NTD18N06L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 55W | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series NTD18N06L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 55W | ||
Maximum Gate Source Voltage Vgs 15V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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