DiodesZetex DMN Type N-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin X2-DFN DMN2300UFB4-7B
- RS stock no.:
- 770-5128
- Mfr. Part No.:
- DMN2300UFB4-7B
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
R 140,85
(exc. VAT)
R 162,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 13,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 2.817 | R 140.85 |
| 250 - 1200 | R 2.746 | R 137.30 |
| 1250 - 4950 | R 2.664 | R 133.20 |
| 5000 - 9950 | R 2.557 | R 127.85 |
| 10000 + | R 2.455 | R 122.75 |
*price indicative
- RS stock no.:
- 770-5128
- Mfr. Part No.:
- DMN2300UFB4-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X2-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.35mm | |
| Width | 0.65 mm | |
| Length | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X2-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.35mm | ||
Width 0.65 mm | ||
Length 1.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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