DiodesZetex DMN31D5UFO Type N-Channel MOSFET, 410 mA, 30 V Enhancement, 3-Pin X2-DFN DMN31D5UFO-7B
- RS stock no.:
- 213-9189
- Mfr. Part No.:
- DMN31D5UFO-7B
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 200 units)*
R 360,20
(exc. VAT)
R 414,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 9,600 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 800 | R 1.801 | R 360.20 |
| 1000 - 1800 | R 1.756 | R 351.20 |
| 2000 - 2800 | R 1.704 | R 340.80 |
| 3000 - 4800 | R 1.635 | R 327.00 |
| 5000 + | R 1.57 | R 314.00 |
*price indicative
- RS stock no.:
- 213-9189
- Mfr. Part No.:
- DMN31D5UFO-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 410mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN | |
| Series | DMN31D5UFO | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 0.38W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 0.38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.65mm | |
| Height | 0.4mm | |
| Standards/Approvals | No | |
| Width | 0.45 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 410mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN | ||
Series DMN31D5UFO | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 0.38W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 0.38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 0.65mm | ||
Height 0.4mm | ||
Standards/Approvals No | ||
Width 0.45 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN31D5UFO series is N-channel MOSFET. It is used in general purpose interfacing switch, power management functions and analogue switch.
ESD protected gate
Low package profile
Related links
- DiodesZetex DMN31D5UFO Type N-Channel MOSFET 30 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMP Type P-Channel MOSFET 30 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMP Type P-Channel MOSFET 30 V Enhancement, 3-Pin X2-DFN DMP32D9UFO-7B
- DiodesZetex DMN2991UFO Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 3-Pin X2-DFN
- DiodesZetex DMN2991UFO Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN DMN2991UFO-7B
- DiodesZetex DMN2991UFO Type N-Channel MOSFET 20 V Enhancement, 3-Pin X2-DFN DMN2991UFB4-7B
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 3-Pin X2-DFN DMN1260UFA-7B