Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- RS stock no.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 157,30
(exc. VAT)
R 180,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 600 | R 6.292 | R 157.30 |
| 625 - 2475 | R 6.134 | R 153.35 |
| 2500 - 12475 | R 5.95 | R 148.75 |
| 12500 - 74975 | R 5.712 | R 142.80 |
| 75000 + | R 5.484 | R 137.10 |
*price indicative
- RS stock no.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS® N-Channel MOSFET 600 V, 3-Pin SOT-23 BSS127H6327XTSA2
- Infineon BSS127I N-Channel MOSFET 600 V, 3-Pin SOT-23 BSS127IXTSA1
- Infineon SIPMOS® N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon SIPMOS® N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- Infineon BSS127I N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS127IXTSA1
- Diodes Inc N-Channel MOSFET 600 V, 3-Pin SOT-23 BSS127S-7
- Microchip VN2460 Silicon N-Channel MOSFET 600 V, 3-Pin SOT-89 VN2460N8-G
- Infineon SIPMOS® N-Channel MOSFET 600 V, 3-Pin SOT-223 BSP125H6327XTSA1