Infineon SIPMOS Type N-Channel MOSFET, 2.9 A, 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1
- RS stock no.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tape of 10 units)*
R 123,07
(exc. VAT)
R 141,53
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 300 unit(s) shipping from 12 March 2026
- Plus 50 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 240 | R 12.307 | R 123.07 |
| 250 - 990 | R 11.999 | R 119.99 |
| 1000 - 4990 | R 11.639 | R 116.39 |
| 5000 - 9990 | R 11.173 | R 111.73 |
| 10000 + | R 10.726 | R 107.26 |
*price indicative
- RS stock no.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 0.95V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.5mm | |
| Width | 3.5 mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 0.95V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.5mm | ||
Width 3.5 mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
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- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223