Infineon OptiMOS Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
- RS stock no.:
- 752-7773
- Mfr. Part No.:
- 2N7002H6327XTSA2
- Manufacturer:
- Infineon
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Subtotal (1 pack of 100 units)*
R 96,60
(exc. VAT)
R 111,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,200 unit(s) shipping from 29 December 2025
- Plus 63,300 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 2400 | R 0.966 | R 96.60 |
| 2500 - 9900 | R 0.942 | R 94.20 |
| 10000 - 49900 | R 0.913 | R 91.30 |
| 50000 - 299900 | R 0.877 | R 87.70 |
| 300000 + | R 0.842 | R 84.20 |
*price indicative
- RS stock no.:
- 752-7773
- Mfr. Part No.:
- 2N7002H6327XTSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-298 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.9mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-298 | ||
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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