DiodesZetex ZVN4525G Type N-Channel MOSFET, 310 mA, 250 V Enhancement, 4-Pin SOT-223 ZVN4525GTA
- RS stock no.:
- 751-5269
- Mfr. Part No.:
- ZVN4525GTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 118,96
(exc. VAT)
R 136,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 11.896 | R 118.96 |
| 50 - 240 | R 11.599 | R 115.99 |
| 250 - 490 | R 11.251 | R 112.51 |
| 500 - 990 | R 10.801 | R 108.01 |
| 1000 + | R 10.369 | R 103.69 |
*price indicative
- RS stock no.:
- 751-5269
- Mfr. Part No.:
- ZVN4525GTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | ZVN4525G | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.7mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series ZVN4525G | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.7mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex ZVN4525G Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 ZVP2110GTA
- Nexperia BSP126 Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Nexperia BSP126 Type N-Channel MOSFET 250 V Enhancement115
- DiodesZetex Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1