DiodesZetex DMG1013T Type P-Channel MOSFET, 460 mA, 20 V Enhancement, 3-Pin SC-89 DMG1013T-7
- RS stock no.:
- 751-4076
- Mfr. Part No.:
- DMG1013T-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 100 units)*
R 74,50
(exc. VAT)
R 85,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,100 unit(s) shipping from 01 June 2026
- Plus 219,000 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 0.745 | R 74.50 |
| 500 - 900 | R 0.726 | R 72.60 |
| 1000 - 2900 | R 0.704 | R 70.40 |
| 3000 - 5900 | R 0.676 | R 67.60 |
| 6000 + | R 0.649 | R 64.90 |
*price indicative
- RS stock no.:
- 751-4076
- Mfr. Part No.:
- DMG1013T-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 460mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | DMG1013T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.58nC | |
| Maximum Power Dissipation Pd | 270mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 460mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series DMG1013T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.58nC | ||
Maximum Power Dissipation Pd 270mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 1.7mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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