DiodesZetex DMG1013T Type P-Channel MOSFET, 460 mA, 20 V Enhancement, 3-Pin SC-89
- RS stock no.:
- 121-9541
- Mfr. Part No.:
- DMG1013T-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 1 869,00
(exc. VAT)
R 2 148,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 312,000 unit(s) shipping from 10 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 0.623 | R 1,869.00 |
| 6000 - 9000 | R 0.607 | R 1,821.00 |
| 12000 - 27000 | R 0.589 | R 1,767.00 |
| 30000 - 57000 | R 0.566 | R 1,698.00 |
| 60000 + | R 0.543 | R 1,629.00 |
*price indicative
- RS stock no.:
- 121-9541
- Mfr. Part No.:
- DMG1013T-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 460mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | DMG1013T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 270mW | |
| Typical Gate Charge Qg @ Vgs | 0.58nC | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Length | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 460mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series DMG1013T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 270mW | ||
Typical Gate Charge Qg @ Vgs 0.58nC | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Length 1.7mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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