DiodesZetex DMG1012UW-7 N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SC-70 DMG1012UW-7
- RS stock no.:
- 751-4073
- Mfr. Part No.:
- DMG1012UW-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (100 units, in packs of 100)*
R 200,60
(exc. VAT)
R 230,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 02 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 2.006 | R 200.60 |
| 500 - 900 | R 1.956 | R 195.60 |
| 1000 - 2900 | R 1.897 | R 189.70 |
| 3000 - 5900 | R 1.821 | R 182.10 |
| 6000 + | R 1.748 | R 174.80 |
*price indicative
- RS stock no.:
- 751-4073
- Mfr. Part No.:
- DMG1012UW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG1012UW-7 | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 290mW | |
| Maximum Gate Source Voltage Vgs | -6V, +6V | |
| Typical Gate Charge Qg @ Vgs | 0.74nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG1012UW-7 | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 290mW | ||
Maximum Gate Source Voltage Vgs -6V, +6V | ||
Typical Gate Charge Qg @ Vgs 0.74nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1mm | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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