DiodesZetex DMN53D0LW Type N-Channel MOSFET, 360 mA, 50 V Enhancement, 3-Pin SC-70 DMN53D0LW-7
- RS stock no.:
- 828-3206
- Mfr. Part No.:
- DMN53D0LW-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 25,04
(exc. VAT)
R 28,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 19 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 1.252 | R 25.04 |
| 100 - 180 | R 1.221 | R 24.42 |
| 200 - 480 | R 1.184 | R 23.68 |
| 500 - 980 | R 1.137 | R 22.74 |
| 1000 + | R 1.091 | R 21.82 |
*price indicative
- RS stock no.:
- 828-3206
- Mfr. Part No.:
- DMN53D0LW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | DMN53D0LW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Power Dissipation Pd | 420mW | |
| Forward Voltage Vf | 0.75V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series DMN53D0LW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Power Dissipation Pd 420mW | ||
Forward Voltage Vf 0.75V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex DMN53D0LW Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70
- DiodesZetex Single 1 Type N-Channel MOSFET 50 V Enhancement, 6-Pin SC-88 DMN53D0LDW-7
- DiodesZetex Single 1 Type N-Channel MOSFET 50 V Enhancement, 6-Pin SC-88
- Infineon BSR316P Type P-Channel MOSFET 100 V Enhancement, 3-Pin SC-59 BSR316PH6327XTSA1
- Infineon BSR316P Type P-Channel MOSFET 100 V Enhancement, 3-Pin SC-59
- DiodesZetex BSS138W Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70
- onsemi BSS138W Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70 BSS138W
- ROHM RUC002N05 Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70 RUC002N05T116