DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 5.8 A, 40 V Enhancement, 8-Pin SOIC DMP4025LSD-13
- RS stock no.:
- 823-4030
- Mfr. Part No.:
- DMP4025LSD-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 115,15
(exc. VAT)
R 132,42
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 5,570 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 11.515 | R 115.15 |
| 50 - 240 | R 11.227 | R 112.27 |
| 250 - 1240 | R 10.89 | R 108.90 |
| 1250 - 2490 | R 10.454 | R 104.54 |
| 2500 + | R 10.036 | R 100.36 |
*price indicative
- RS stock no.:
- 823-4030
- Mfr. Part No.:
- DMP4025LSD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.7V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 2.14W | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Standards/Approvals | MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | |
| Length | 4.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.7V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 2.14W | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Standards/Approvals MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, J-STD-020 | ||
Length 4.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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