onsemi MMBF170L Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin SOT-23 MMBF170

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Subtotal (1 pack of 10 units)*

R 29,36

(exc. VAT)

R 33,76

(inc. VAT)

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Supply shortage
  • Plus 180 left, shipping from 05 January 2026
  • Plus 8,450 left, shipping from 12 January 2026
Our current stock is limited and our suppliers are expecting shortages.
Units
Per unit
Per Pack*
10 - 40R 2.936R 29.36
50 - 90R 2.863R 28.63
100 - 240R 2.777R 27.77
250 - 490R 2.666R 26.66
500 +R 2.559R 25.59

*price indicative

Packaging Options:
RS stock no.:
739-0357
Mfr. Part No.:
MMBF170
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

500mA

Maximum Drain Source Voltage Vds

60V

Series

MMBF170L

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300mW

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.92mm

Height

0.93mm

Width

1.3 mm

Automotive Standard

No

COO (Country of Origin):
CN

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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