DiodesZetex BSN20 Type N-Channel MOSFET, 500 mA, 50 V Enhancement, 3-Pin SOT-23 BSN20-7
- RS stock no.:
- 822-2179
- Mfr. Part No.:
- BSN20-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 216,40
(exc. VAT)
R 248,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,700 unit(s) ready to ship from another location
- Plus 31,000 unit(s) shipping from 24 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 2.164 | R 216.40 |
| 500 - 900 | R 2.11 | R 211.00 |
| 1000 - 1400 | R 2.046 | R 204.60 |
| 1500 - 2900 | R 1.965 | R 196.50 |
| 3000 + | R 1.886 | R 188.60 |
*price indicative
- RS stock no.:
- 822-2179
- Mfr. Part No.:
- BSN20-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSN20 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 920mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSN20 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 920mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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