onsemi BS170 Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92 BS170
- RS stock no.:
- 671-4736
- Mfr. Part No.:
- BS170
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 58,28
(exc. VAT)
R 67,02
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 110 unit(s) shipping from 29 December 2025
- Plus 4,620 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.828 | R 58.28 |
| 50 - 90 | R 5.682 | R 56.82 |
| 100 - 240 | R 5.512 | R 55.12 |
| 250 - 490 | R 5.292 | R 52.92 |
| 500 + | R 5.08 | R 50.80 |
*price indicative
- RS stock no.:
- 671-4736
- Mfr. Part No.:
- BS170
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | BS170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.6V | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 830mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Width | 4.19 mm | |
| Distrelec Product Id | 304-43-724 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series BS170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.6V | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 830mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.2mm | ||
Height 5.33mm | ||
Width 4.19 mm | ||
Distrelec Product Id 304-43-724 | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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