Recently searched

    N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 Infineon IRLML6344TRPBF

    RS stock no.:
    913-4073
    Mfr. Part No.:
    IRLML6344TRPBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    99000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (On a Reel of 3000)

    R 3.127

    (exc. VAT)

    R 3.596

    (inc. VAT)

    unitsPer unitPer Reel*
    3000 - 3000R 3.127R 9,381.00
    6000 - 9000R 3.049R 9,147.00
    12000 - 27000R 2.957R 8,871.00
    30000 - 57000R 2.839R 8,517.00
    60000 +R 2.725R 8,175.00
    *price indicative
    RS stock no.:
    913-4073
    Mfr. Part No.:
    IRLML6344TRPBF
    Manufacturer:
    Infineon
    COO (Country of Origin):
    PH

    Legislation and Compliance

    COO (Country of Origin):
    PH

    Product Details

    N-Channel Power MOSFET 30V, Infineon


    The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current5 A
    Maximum Drain Source Voltage30 V
    Package TypeSOT-23
    Mounting TypeSurface Mount
    Pin Count3
    Maximum Drain Source Resistance37 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage1.1V
    Minimum Gate Threshold Voltage0.5V
    Maximum Power Dissipation1.3 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-12 V, +12 V
    Number of Elements per Chip1
    Transistor MaterialSi
    Width1.4mm
    Typical Gate Charge @ Vgs6.8 nC @ 4.5 V
    Length3.04mm
    Maximum Operating Temperature+150 °C
    SeriesHEXFET
    Height1.02mm
    Minimum Operating Temperature-55 °C
    99000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (On a Reel of 3000)

    R 3.127

    (exc. VAT)

    R 3.596

    (inc. VAT)

    unitsPer unitPer Reel*
    3000 - 3000R 3.127R 9,381.00
    6000 - 9000R 3.049R 9,147.00
    12000 - 27000R 2.957R 8,871.00
    30000 - 57000R 2.839R 8,517.00
    60000 +R 2.725R 8,175.00
    *price indicative