Infineon HEXFET N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF
- RS stock no.:
- 737-7225
- Distrelec Article No.:
- 304-45-318
- Mfr. Part No.:
- IRLML6344TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 226,56
(exc. VAT)
R 260,54
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,760 unit(s) ready to ship from another location
- Plus 5,420 unit(s) shipping from 22 September 2026
- Plus 6,000 unit(s) shipping from 21 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 11.328 | R 226.56 |
| 40 - 80 | R 11.045 | R 220.90 |
| 100 - 180 | R 10.713 | R 214.26 |
| 200 - 380 | R 10.285 | R 205.70 |
| 400 + | R 9.873 | R 197.46 |
*price indicative
- RS stock no.:
- 737-7225
- Distrelec Article No.:
- 304-45-318
- Mfr. Part No.:
- IRLML6344TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF
This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.
Features & Benefits
• Offers a continuous drain current of 5A for robust performance
• Maximum drain-source voltage of 30V supports various requirements
• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses
• Wide gate threshold voltage range enables flexible operation
• Efficient power dissipation capability of 1.3W enhances reliability
Applications
• Ideal for microcontroller load switching in electronic systems
• Used in power management solutions for automotive
• Effective in DC-DC converters for efficient energy conversion
• Suitable for battery management systems to improve performance
• Effective in motor control circuits for automation tasks
What is the significance of the low RDS(on) value?
The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.
What voltage range can be applied to the gate-source junction?
The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.
How does the device perform under high temperatures?
With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.
What benefits does the surface mount design provide?
The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23