Infineon HEXFET Type N-Channel MOSFET, 5.8 A, 25 V Enhancement, 3-Pin SOT-23 IRFML8244TRPBF

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Subtotal (1 pack of 20 units)*

R 76,34

(exc. VAT)

R 87,80

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 3.817R 76.34
40 - 80R 3.722R 74.44
100 - 180R 3.61R 72.20
200 - 380R 3.466R 69.32
400 +R 3.327R 66.54

*price indicative

Packaging Options:
RS stock no.:
737-7219
Mfr. Part No.:
IRFML8244TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.8A

Maximum Drain Source Voltage Vds

25V

Package Type

SOT-23

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.4nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.25W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Automotive Standard

No

Distrelec Product Id

304-45-306

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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