STMicroelectronics STripFET II Type N-Channel MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263 STB75NF75LT4
- RS stock no.:
- 714-6778
- Mfr. Part No.:
- STB75NF75LT4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 76,07
(exc. VAT)
R 87,48
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,796 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 38.035 | R 76.07 |
| 10 - 18 | R 37.085 | R 74.17 |
| 20 - 38 | R 35.97 | R 71.94 |
| 40 - 98 | R 34.53 | R 69.06 |
| 100 + | R 33.15 | R 66.30 |
*price indicative
- RS stock no.:
- 714-6778
- Mfr. Part No.:
- STB75NF75LT4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | STripFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Width | 9.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series STripFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.6mm | ||
Width 9.35 mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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