Vishay IRFP250 N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250PBF
- RS stock no.:
- 708-5156
- Mfr. Part No.:
- IRFP250PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 444,72
(exc. VAT)
R 511,43
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 90 unit(s) shipping from 02 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 88.944 | R 444.72 |
| 25 - 95 | R 86.72 | R 433.60 |
| 100 - 245 | R 84.118 | R 420.59 |
| 250 - 495 | R 80.754 | R 403.77 |
| 500 + | R 77.524 | R 387.62 |
*price indicative
- RS stock no.:
- 708-5156
- Mfr. Part No.:
- IRFP250PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | IRFP250 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Forward Voltage Vf | 2V | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 5.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series IRFP250 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Forward Voltage Vf 2V | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 20.7mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 5.31mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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