Name: Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247
Brand: Infineon
SKU: 124-8762
Price: 42.35 ZAR
Availability: OutOfStock

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	123nC
	Maximum Power Dissipation Pd	214W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	16.13mm
	Height	21.1mm
	Width	5.2 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 123nC
	Maximum Power Dissipation Pd 214W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 16.13mm
	Height 21.1mm
	Width 5.2 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF

This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.

Features & Benefits

• Dynamic dv/dt rating ensures stability during operation

• Enhanced thermal capabilities, with an operating temperature of up to 175°C

• Low on-resistance reduces power losses

• Fully avalanche-rated, providing over-voltage protection

• Simple drive requirements for easier integration into designs

Applications

• Suitable for high-frequency switching

• Ideal for power supplies and converters

• Applicable in motor control systems and industrial drives

• Utilised in renewable energy systems, such as solar inverters

How is thermal performance managed in demanding environments?

The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.

What are the implications of the low Rds(on)?

The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.

Can this device be used for parallel configurations?

Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.

What should be considered when selecting the gate drive voltage?

A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.

What measures are in place for over-voltage protection?

The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions.

Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247