Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

RS stock no.:: 688-7014
Mfr. Part No.:: IRFP4468PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247 IRFP4468PBF

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Subtotal (1 unit)*

R 106,35

(exc. VAT)

R 122,30

(inc. VAT)

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In Stock

192 unit(s) ready to ship from another location
Plus 1,759 unit(s) shipping from 06 January 2026

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Units	Per unit
1 - 4	R 106.35
5 - 9	R 103.69
10 - 19	R 100.58
20 - 49	R 96.56
50 +	R 92.70

*price indicative

RS stock no.:: 688-7014
Mfr. Part No.:: IRFP4468PBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	290A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	360nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	520W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	5.31 mm
	Height	20.7mm
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 290A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 360nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 520W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 5.31 mm
	Height 20.7mm
	Length 15.87mm
	Automotive Standard No

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