STMicroelectronics STripFET II N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 STB30NF10T4
- RS stock no.:
- 687-5194
- Mfr. Part No.:
- STB30NF10T4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
R 169,88
(exc. VAT)
R 195,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,945 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 33.976 | R 169.88 |
| 25 - 45 | R 33.126 | R 165.63 |
| 50 - 120 | R 32.132 | R 160.66 |
| 125 - 245 | R 30.846 | R 154.23 |
| 250 + | R 29.612 | R 148.06 |
*price indicative
- RS stock no.:
- 687-5194
- Mfr. Part No.:
- STB30NF10T4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET II | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 115W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.35mm | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET II | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 115W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Width 9.35mm | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263