onsemi PowerTrench N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123LT1G
- RS stock no.:
- 545-0135
- Mfr. Part No.:
- BSS123LT1G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 29,75
(exc. VAT)
R 34,21
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,210 unit(s) ready to ship from another location
- Plus 35,390 unit(s) shipping from 02 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 2.975 | R 29.75 |
| 50 - 190 | R 2.901 | R 29.01 |
| 200 - 490 | R 2.814 | R 28.14 |
| 500 - 990 | R 2.701 | R 27.01 |
| 1000 + | R 2.593 | R 25.93 |
*price indicative
- RS stock no.:
- 545-0135
- Mfr. Part No.:
- BSS123LT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 225mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Standards/Approvals | No | |
| Height | 940μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 225mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.3mm | ||
Standards/Approvals No | ||
Height 940μm | ||
Automotive Standard No | ||
Exempt
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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