onsemi 2N7002L Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002LT1G
- RS stock no.:
- 545-0012
- Mfr. Part No.:
- 2N7002LT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 112,75
(exc. VAT)
R 129,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 500 unit(s) ready to ship from another location
- Plus 14,650 unit(s) shipping from 29 June 2026
- Plus 9,000 unit(s) shipping from 26 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 2.255 | R 112.75 |
| 250 - 950 | R 2.199 | R 109.95 |
| 1000 - 2450 | R 2.133 | R 106.65 |
| 2500 - 4950 | R 2.048 | R 102.40 |
| 5000 + | R 1.966 | R 98.30 |
*price indicative
- RS stock no.:
- 545-0012
- Mfr. Part No.:
- 2N7002LT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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