Vishay IRF Type P-Channel MOSFET, 4 A, 100 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 543-0018
- Mfr. Part No.:
- IRF9510PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 13,89
(exc. VAT)
R 15,97
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 45 unit(s) shipping from 23 March 2026
- Plus 358 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 13.89 |
| 25 - 99 | R 13.54 |
| 100 - 249 | R 13.13 |
| 250 - 499 | R 12.60 |
| 500 + | R 12.10 |
*price indicative
- RS stock no.:
- 543-0018
- Mfr. Part No.:
- IRF9510PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IRF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | -5.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IRF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf -5.5V | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements
Related links
- Vishay IRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9510PBF
- Vishay IRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRF Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9520PBF
- Vishay IRF Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF9620PBF
- Vishay IRF Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF9610PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220