Vishay IRF Type P-Channel MOSFET, 4 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 unit)*

R 14,10

(exc. VAT)

R 16,22

(inc. VAT)

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1 - 24R 14.10
25 - 99R 13.75
100 - 249R 13.34
250 - 499R 12.81
500 +R 12.30

*price indicative

Packaging Options:
RS stock no.:
543-0018
Mfr. Part No.:
IRF9510PBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Series

IRF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-5.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Maximum Power Dissipation Pd

43W

Maximum Operating Temperature

175°C

Length

10.41mm

Standards/Approvals

No

Width

4.7 mm

Height

9.01mm

Automotive Standard

No

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

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