Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF

RS stock no.:: 178-0851
Mfr. Part No.:: IRF820PBF
Manufacturer:: Vishay

Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF

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Subtotal (1 tube of 50 units)*

R 758,40

(exc. VAT)

R 872,15

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

600 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 +	R 15.168	R 758.40

*price indicative

RS stock no.:: 178-0851
Mfr. Part No.:: IRF820PBF
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRF820
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.6V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	9.01mm
	Width	4.7mm
	Length	10.41mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRF820
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.6V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 9.01mm
	Width 4.7mm
	Length 10.41mm
	Automotive Standard No

Datasheet

Vishay IRF820 Series Power MOSFET, 500V Drain Source Voltage, 2.5A Continuous Drain Current - IRF820PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and amplification tasks in industrial electronics. It suits applications requiring elevated drain-source voltages and moderate continuous current, operating across a wide temperature span and mounted in a standard through-hole package for straightforward board assembly.

Features and Benefits:

• 500V drain-source rating enables high-voltage switching
• 2.5A continuous current supports moderate load handling
• 50W power dissipation allows sustained thermal performance
• 3 Ω on-resistance reduces conduction-related losses
• 24 nC typical gate charge yields predictable drive requirements
• Vgs ±20V tolerance protects gate from overvoltage events

Applications

• Suitable for SMPS primary-side switching in industrial supplies
• Ideal for linear amplifier stages requiring high-voltage transistors
• Used for motor-drive Interface circuits with moderate currents
• Can be used for high-voltage test rigs and laboratory power supplies
• Suitable for retrofit through-hole designs in control panels

What mounting approach does this device require?

It is supplied for through-hole assembly in a TO-220AB package, allowing conventional soldering and heatsinking options.

What thermal range can it tolerate during operation?

It can operate between -55 °C and 150 °C, permitting use in harsh ambient and elevated-junction scenarios.

How does gate drive impact switching behaviour?

The typical gate charge of 24 nC at rated gate voltage determines required driver current and switching-speed trade-offs.

What must be considered for power dissipation management?

With a 50W maximum dissipation, external heatsinking and mounting orientation are necessary to maintain safe junction temperatures at higher loads.

Are there specific electrical limits to observe at the gate?

The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and compromising device integrity.