Vishay IRF Type N-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220 IRF530PBF
- RS stock no.:
- 708-4730
- Distrelec Article No.:
- 304-44-153
- Mfr. Part No.:
- IRF530PBF
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 132,58
(exc. VAT)
R 152,465
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 85 unit(s) ready to ship from another location
- Plus 915 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 26.516 | R 132.58 |
| 25 - 95 | R 25.854 | R 129.27 |
| 100 - 245 | R 25.078 | R 125.39 |
| 250 - 495 | R 24.074 | R 120.37 |
| 500 + | R 23.112 | R 115.56 |
*price indicative
- RS stock no.:
- 708-4730
- Distrelec Article No.:
- 304-44-153
- Mfr. Part No.:
- IRF530PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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