Vishay SIZF4800LDT 2 Type N-Channel MOSFET, 36 A, 80 V Enhancement, 12-Pin 3 x 3FS
- RS stock no.:
- 280-0005
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 reel of 3000 units)*
R 39 891,00
(exc. VAT)
R 45 876,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 6,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 13.297 | R 39,891.00 |
*price indicative
- RS stock no.:
- 280-0005
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | 3 x 3FS | |
| Series | SIZF4800LDT | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 80 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101, RoHS, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type 3 x 3FS | ||
Series SIZF4800LDT | ||
Mount Type Surface | ||
Pin Count 12 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 80 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101, RoHS, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Symmetric dual n-channel
Fully lead (Pb)-free device
Related links
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