DiodesZetex Dual DMHT10H032LFJ 1 Type N-Channel MOSFET, 6 A, 100 V Enhancement, 12-Pin VDFN DMHT10H032LFJ-13
- RS stock no.:
- 213-9147
- Mfr. Part No.:
- DMHT10H032LFJ-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 343,87
(exc. VAT)
R 395,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,950 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 34.387 | R 343.87 |
| 50 - 90 | R 33.527 | R 335.27 |
| 100 - 240 | R 32.521 | R 325.21 |
| 250 - 990 | R 31.22 | R 312.20 |
| 1000 + | R 29.971 | R 299.71 |
*price indicative
- RS stock no.:
- 213-9147
- Mfr. Part No.:
- DMHT10H032LFJ-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMHT10H032LFJ | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 64W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 5mm | |
| Height | 0.8mm | |
| Standards/Approvals | AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMHT10H032LFJ | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 64W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 5mm | ||
Height 0.8mm | ||
Standards/Approvals AEC-Q101, RoHS, UL 94V-0, MIL-STD-202, J-STD-020 | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
The DiodesZetex DMHT10H032LFJ series is a N-channel MOSFET in a H-bridge configuration.
High conversion efficiency
Fast switching speed
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