Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

RS stock no.:: 279-9919
Mfr. Part No.:: SIHK155N60E-T1-GE3
Manufacturer:: Vishay

Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

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Subtotal (1 reel of 2000 units)*

R 95 694,00

(exc. VAT)

R 110 048,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

2,000 unit(s) ready to ship from another location

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Units	Per unit	Per Reel*
2000 +	R 47.847	R 95,694.00

*price indicative

RS stock no.:: 279-9919
Mfr. Part No.:: SIHK155N60E-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	156W
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	9.9mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 156W
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 9.9mm
	Automotive Standard No

Datasheet - SIHK155N60E-T1-GE3

Vishay SIHK Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHK155N60E-T1-GE3

This MOSFET is a high-voltage enhancement-mode N-channel switching transistor designed for surface-mount power conversion and control applications. It suits circuits requiring robust drain-to-source blocking at elevated voltages while operating across a wide temperature span.

Features and Benefits:

• 600V drain-source rating enables high-voltage designs • 19A continuous drain current supports substantial load currents • 0.158Ω Rds(on) reduces conduction losses during operation • 36nC typical gate charge for predictable switching performance • 156W power dissipation allows sustained heat handling • 150°C maximum operating temperature tolerates elevated thermal stress

Applications

• Suitable for offline SMPS primary switches in power supplies • Ideal for industrial motor drive switching stages • Used for high-voltage DC-DC converters in automation systems • Can be used for inverter output stage switching in electrical drives • Used for switch-mode loads in mechanical control equipment

What package should I account for when laying out the board?

The device is supplied in an 8-pin PowerPAK10x12 surface-mount package, requiring a footprint compatible with that thermal pad and lead arrangement.

What gate voltage range is safe for control circuitry?

The maximum permissible gate-to-source voltage is 30V, so driver circuits should retain gate excursions within that limit.

How does it behave thermally under load?

It can dissipate up to 156W

thermal management must ensure junction-to-ambient temperature stays within limits for reliable operation up to its 150°C rating.

Are there environmental or regulatory design considerations?

It is RoHS-compliant, allowing use in designs that restrict hazardous substances.

What switching characteristic affects driver selection?

The typical gate charge is 36nC at the rated gate voltage, which determines the required drive current and switching speed trade-offs.