Vishay EF N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- RS stock no.:
- 279-9908
- Mfr. Part No.:
- SIHF085N60EF-GE3
- Manufacturer:
- Vishay
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R 3 536,25
(exc. VAT)
R 4 066,70
(inc. VAT)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 70.725 | R 3,536.25 |
| 100 + | R 68.956 | R 3,447.80 |
*price indicative
- RS stock no.:
- 279-9908
- Mfr. Part No.:
- SIHF085N60EF-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF MOSFET, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - SIHF085N60EF-GE3
This MOSFET is a high-voltage N-channel enhancement device intended for power-switching and control stages in through-hole assemblies. It is designed to handle elevated drain-to-source stresses while operating across a wide temperature span, making it suitable for demanding electronic systems that require robust switching and thermal endurance.
Features and Benefits:
• 600V drain capability enabling high-voltage switching applications
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems
What mounting style does it require and how does that affect thermal handling?
It uses a TO-220 through-hole package which permits bolting to a heatsink for improved thermal dissipation and straightforward PCB assembly.
What gate-drive considerations are necessary for efficient switching?
Design the driver to supply sufficient charge for the 63nC typical gate charge to achieve desired rise/fall times while avoiding excessive gate stress near the ±30V limit.
How does the device perform across temperature extremes?
It is rated to operate from -55°C up to 150°C, allowing use in environments with significant thermal variation while maintaining electrical characteristics.
What is the forward conduction characteristic relevant to diode conduction paths?
The forward voltage specification is 1.2V, which informs loss calculations when body diode conduction occurs during switching or reverse-current events.
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