Infineon OptiMOS Type N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS stock no.:
- 273-5248
- Mfr. Part No.:
- BSZ0902NSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 127,18
(exc. VAT)
R 146,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 50 unit(s) shipping from 02 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 12.718 | R 127.18 |
| 50 - 490 | R 12.40 | R 124.00 |
| 500 - 990 | R 12.028 | R 120.28 |
| 1000 - 2490 | R 11.547 | R 115.47 |
| 2500 + | R 11.085 | R 110.85 |
*price indicative
- RS stock no.:
- 273-5248
- Mfr. Part No.:
- BSZ0902NSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8FL | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8FL | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an excellent gate charge. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. It is a optimized for high performance buck converter.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
Related links
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0902NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0901NSIATMA1
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon ISZ Type N-Channel OptiMOSTM Power-MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ019N03L5SATMA1
- Infineon ISZ Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1