Infineon ISC N-Channel OptiMOST Power-MOSFET, 63 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC045N03L5SATMA1
- RS stock no.:
- 273-3040
- Mfr. Part No.:
- ISC045N03L5SATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 240,65
(exc. VAT)
R 276,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,950 unit(s) shipping from 05 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.626 | R 240.65 |
| 50 - 475 | R 9.385 | R 234.63 |
| 500 - 975 | R 9.104 | R 227.60 |
| 1000 - 2475 | R 8.74 | R 218.50 |
| 2500 + | R 8.39 | R 209.75 |
*price indicative
- RS stock no.:
- 273-3040
- Mfr. Part No.:
- ISC045N03L5SATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | OptiMOST Power-MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 890mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type OptiMOST Power-MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 890mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon low voltage power MOSFET is offering broad accessibility and competitive price/performance ratio.
Enables cost effective solutions
Fast shipment
Easy to design in
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