Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- RS stock no.:
- 349-139
- Mfr. Part No.:
- ISC032N12LM6ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 169,40
(exc. VAT)
R 194,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 84.70 | R 169.40 |
| 20 - 198 | R 82.585 | R 165.17 |
| 200 - 998 | R 80.105 | R 160.21 |
| 1000 - 1998 | R 76.90 | R 153.80 |
| 2000 + | R 73.825 | R 147.65 |
*price indicative
- RS stock no.:
- 349-139
- Mfr. Part No.:
- ISC032N12LM6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 211W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series ISC | ||
Package Type PG-TDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 211W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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