ROHM R6013VNX Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-220 R6013VNXC7G

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Subtotal (1 pack of 2 units)*

R 73,57

(exc. VAT)

R 84,606

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 36.785R 73.57
50 - 98R 35.865R 71.73
100 - 248R 34.79R 69.58
250 - 498R 33.40R 66.80
500 +R 32.065R 64.13

*price indicative

Packaging Options:
RS stock no.:
265-5418
Mfr. Part No.:
R6013VNXC7G
Manufacturer:
ROHM
Find similar products by selecting one or more attributes.
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

600V

Series

R6013VNX

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.3Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

54W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.

Fast reverse recovery time (trr)

Low on resistance

Fast switching speed

Drive circuits can be simple

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