Microchip TN0606 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin TO-92 TN0606N3-G
- RS stock no.:
- 264-8910
- Mfr. Part No.:
- TN0606N3-G
- Manufacturer:
- Microchip
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 173,12
(exc. VAT)
R 199,09
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 660 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 17.312 | R 173.12 |
| 50 - 90 | R 16.879 | R 168.79 |
| 100 - 240 | R 16.373 | R 163.73 |
| 250 - 490 | R 15.718 | R 157.18 |
| 500 + | R 15.089 | R 150.89 |
*price indicative
- RS stock no.:
- 264-8910
- Mfr. Part No.:
- TN0606N3-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN0606 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN0606 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
2V maximum low threshold
High input impedance
100pF typical low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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