Infineon HEXFET Type N-Channel MOSFET, 45 A, 75 V Enhancement, 3-Pin TO-252 IRFR2607ZTRPBF
- RS stock no.:
- 262-6768
- Mfr. Part No.:
- IRFR2607ZTRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 166,84
(exc. VAT)
R 191,865
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,760 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 33.368 | R 166.84 |
| 50 - 95 | R 32.534 | R 162.67 |
| 100 - 245 | R 31.558 | R 157.79 |
| 250 - 995 | R 30.296 | R 151.48 |
| 1000 + | R 29.084 | R 145.42 |
*price indicative
- RS stock no.:
- 262-6768
- Mfr. Part No.:
- IRFR2607ZTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
Related links
- Infineon HEXFET Dual Silicon N-Channel MOSFET 75 V, 3-Pin DPAK IRFR2607ZTRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 75 V, 3-Pin TO-220AB IRF2807ZPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 75 V, 3-Pin TO-220AB IRF3808PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 200 V, 3-Pin TO-262 IRFSL4127PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 3-Pin TO-220 Full-Pak IRFIZ44NPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 3-Pin TO-220 Full-Pak IRFI3205PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 200 V, 3-Pin TO-220 Full-Pak IRFI4227PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 40 V, 3-Pin TO-262 IRFSL7437PBF