Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252 AUIRFR024NTRL

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Subtotal (1 pack of 5 units)*

R 187,08

(exc. VAT)

R 215,14

(inc. VAT)

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Temporarily out of stock
  • 3,000 unit(s) shipping from 21 May 2026
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Units
Per unit
Per Pack*
5 - 5R 37.416R 187.08
10 - 95R 36.48R 182.40
100 - 245R 35.386R 176.93
250 - 495R 33.97R 169.85
500 +R 32.612R 163.06

*price indicative

Packaging Options:
RS stock no.:
244-2258
Mfr. Part No.:
AUIRFR024NTRL
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon AUIRFR024NTRL Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Planar Technology

Low On-Resistance Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified

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