STMicroelectronics Type N-Channel MOSFET, 10 A, 800 V Enhancement, 7-Pin Tape & Reel SCT040HU65G3AG
- RS stock no.:
- 261-5040
- Mfr. Part No.:
- SCT040HU65G3AG
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 254,30
(exc. VAT)
R 292,44
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 207 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 254.30 |
| 10 - 99 | R 247.94 |
| 100 - 249 | R 240.50 |
| 250 - 499 | R 230.88 |
| 500 + | R 221.64 |
*price indicative
- RS stock no.:
- 261-5040
- Mfr. Part No.:
- SCT040HU65G3AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 14 mm | |
| Length | 18.58mm | |
| Height | 3.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 14 mm | ||
Length 18.58mm | ||
Height 3.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Related links
- STMicroelectronics N-Channel MOSFET 800 V Tape and Reel SCT040HU65G3AG
- STMicroelectronics N-Channel MOSFET 800 V Tape and Reel STD80N450K6
- STMicroelectronics N-Channel MOSFET 1200 V Tape and Reel STH12N120K5-2AG
- STMicroelectronics STF N-Channel MOSFET 800 V, 3-Pin TO-220FP STF80N450K6
- STMicroelectronics N-Channel MOSFET 800 V, 3-Pin TO-220 STP80N340K6
- STMicroelectronics N-Channel MOSFET 800 V, 3-Pin TO-220 STP80N240K6
- STMicroelectronics N-Channel MOSFET 800 V, 3-Pin TO-220 STP80N900K6
- STMicroelectronics N-Channel MOSFET 800 V, 3-Pin D2PAK STB11NM80T4