STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK
- RS stock no.:
- 224-9997
- Mfr. Part No.:
- SCTH35N65G2V-7AG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 reel of 100 units)*
R 24 109,80
(exc. VAT)
R 27 726,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 September 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 100 - 200 | R 241.098 | R 24,109.80 |
| 300 - 400 | R 235.071 | R 23,507.10 |
| 500 + | R 228.019 | R 22,801.90 |
*price indicative
- RS stock no.:
- 224-9997
- Mfr. Part No.:
- SCTH35N65G2V-7AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.25mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 175°C | ||
Height 15.25mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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