Infineon HEXFET Type P-Channel MOSFET, -42 A, -55 V TO-263 AUIRF4905STRL

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R 46,59

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R 53,58

(inc. VAT)

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1 - 24R 46.59
25 - 49R 45.43
50 - 99R 44.07
100 - 249R 42.31
250 +R 40.62

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Packaging Options:
RS stock no.:
260-5059
Mfr. Part No.:
AUIRF4905STRL
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-42A

Maximum Drain Source Voltage Vds

-55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

20mΩ

Typical Gate Charge Qg @ Vgs

53nC

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

150°C

Height

15.88mm

Standards/Approvals

RoHS

Width

4.83 mm

Length

10.67mm

Automotive Standard

AEC-Q101

The Infineon P Channel HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced process technology

Ultra low on resistance

Fast switching

Repetitive avalanche allowed up to Tjmax

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