Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252 IRFR220NTRPBF

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Subtotal (1 pack of 5 units)*

R 78,22

(exc. VAT)

R 89,955

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 15.644R 78.22
10 - 95R 15.252R 76.26
100 - 245R 14.794R 73.97
250 - 495R 14.202R 71.01
500 +R 13.634R 68.17

*price indicative

Packaging Options:
RS stock no.:
258-3982
Mfr. Part No.:
IRFR220NTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

43W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-40-536

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

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